ShanghaiTech University Knowledge Management System
Nanoscale Engineering of Ge-based Diluted Magnetic Semiconductors for Room-Temperature Spintronics Application | |
2018 | |
来源专著 | Molecular Beam Epitaxy-From Research to Mass Production |
出版地 | Chennai |
出版者 | Elsevier |
ISBN | 978-0-12-812136-8 |
页码 | 403-419 |
摘要 | This chapter gives a systematic investigation of Mn thermal dynamics and kinetics in MnxGe1-x thin film growth. At high growth temperature, Mn preferred to agglomerate to form Mn5Ge3 intermetallic compound, whereas, the low growth temperature would induce Mn in the form of Mn-rich MnGe nanocolumn. Furthermore, through engineering of the strain in Ge space layer, MnGe/Ge superlattice can go through a structural transition from nanocolumn to nanodot, and finally to nanowell. To search for ideal diluted magnetic semiconductor (DMS) system, we focus our study on DMS nanostructures, including QDs, nanodisks and nanomeshes. Inside, not only high Tc (> 400 K) but also electric-field control of ferromagnetism can be realized. Based on this extraordinary property, a transpinor device is proposed, in which DMS nanostructures are used as the channel for collective spins switching controlled by gate voltage without need of current flow. And thus, it paves a new way for realizing low power-dissipation spin effect transistor. |
文献类型 | 专著章节 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/104333 |
专题 | 信息科学与技术学院_PI研究组_寇煦丰组 |
作者单位 | 1.University of California, Los Angeles 2.Beihang University 3.IBM Thomas J. Watson Research Center 4.ShanghaiTech University 5.Fudan University |
推荐引用方式 GB/T 7714 | Tianxiao Nie,Jianshi Tang,Xufeng Kou,et al. Nanoscale Engineering of Ge-based Diluted Magnetic Semiconductors for Room-Temperature Spintronics Application. Chennai:Elsevier,2018:403-419. |
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