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Characterization of Deep Levels in InP Based InGaAsBi Photodetector | |
Huang, Jian1; Chen, Baile1; Deng, Zhuo1; Gu, Yi2,3; Ma, Yingjie2,3; Zhang, Jian2; Chen, Xiren4; Shao, Jun4 | |
2019-09 | |
会议录名称 | 2019 IEEE PHOTONICS CONFERENCE (IPC) |
ISSN | 2374-0140 |
页码 | 1-2 |
发表状态 | 已发表 |
DOI | 10.1109/IPCon.2019.8908506 |
摘要 | In this work, low frequency noise spectroscopy and temperature varied photoluminescence was used to characterize the defect levels in InGaAsBi photodetector. Both of these independent techniques have found some deep levels, and some of which are the consistent. |
会议地点 | San Antonio, TX, USA |
会议日期 | 29 Sept.-3 Oct. 2019 |
URL | 查看原文 |
收录类别 | EI ; CPCI-S ; CPCI |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
EI入藏号 | 20194907795634 |
EI主题词 | Bismuth compounds ; Gallium compounds ; III-V semiconductors ; Indium phosphide ; Photodetectors ; Photoluminescence ; Photonics ; Photons ; Semiconducting indium phosphide ; Spurious signal noise |
EI分类号 | Compound Semiconducting Materials:712.1.2 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 |
原始文献类型 | Conferences |
引用统计 | |
文献类型 | 会议论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/102098 |
专题 | 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_硕士生 |
通讯作者 | Chen, Baile |
作者单位 | 1.Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China 3.State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai; 200083, China 4.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai; 200083, China |
第一作者单位 | 信息科学与技术学院 |
通讯作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Huang, Jian,Chen, Baile,Deng, Zhuo,et al. Characterization of Deep Levels in InP Based InGaAsBi Photodetector[C]:Institute of Electrical and Electronics Engineers Inc.,2019:1-2. |
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